Understanding dose correction for high-resolution 50 kV electron-beam lithography on thick resist layers
Micro and Nano Engineering by ScienceDirect have published an article by Astrand et Al about dose insufficiency in electron-beam lithography (EBL), a process which “enables the production of precise structures at the nanoscale”
Samples were prepared on Silson’s 250 × 250 μm^2, 100nm thick silicon nitride membranes (frame size 7.5 × 7.5 mm^2, and thickness 200μm), on top of which several layers were grown and developed as shown by the image below.
(Nanofabrication process figure image: Mattias Astrand, Thomas Frisk, Hanna Ohlin, Ulrich Vogt. Understanding dose correction for high-resolution 50 kV electron-beam lithography on thick resist layers. Micro and Nano Engineering. 2022, 100141, ISSN 2590-0072, https://doi.org/10.1016/j.mne.2022.100141)
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