Thin germanium membranes are an excellent alternative to silicon nitride when the presence of nitrogen is detrimental to the application. The germanium used to form these membranes is electrically conductive, which is advantageous for applications where a conductive sample support is required, for example to minimise charging effects in electron microscopy. Also, as a single crystal (100) substrate, the membranes are ideal for epitaxial growth of a wide range of materials.
Initially membranes are available in (100) germanium with a thickness of 50nm in 5.0 mm, 200 µm thick substrates. Membranes sizes of up to 2.0 mm are available from stock but Silson can rapidly respond to requests for other standard permutations and for custom designs.
In addition to the standard square membranes in square frames, rectangular frames and membranes may be produced and also windows consisting of multiple membranes on a single frame, either for experimental compartmentalisation or to increase the stability of large area membranes.
The standard frame option is prime grade, boron-doped (p type) silicon with resistivity from 1 – 30 ohm-cm with a surface roughness of less than 0.5nm.
Every membrane is inspected for ultimate quality assurance and packaged in individual capsules for the best protection during transportation.