
Micro and Nano Engineering have published an article by Astrand et Al which investigates dose insufficiency when writing features in a thick resist layer using Electron-beam lithography (EBL). The abstract reads: “Dose insufficiency originates from the proximity effect distributing energy in volumes of resist that are larger than intended. Based on a simple interpretation of the spread, a proximity effect correction (PEC) algorithm was established. Implementing this, we could realize high-quality nanostructures with direct-write 50 kV EBL on AR-P 6200 (CSAR 62) resist. The latter translates to quick and inexpensive exposures that offer good compatibility with further processes.”
Silson’s silicon nitride membranes of frame size 7.5 × 7.5 mm^2 and thickness 200µm and membrane size 2.5 x 2.5 mm^2 and thickness 100nm were used for the sample preparation for EBL and a thin metal seed layer for electroplating was grown on top of the membranes.
If you would like to read this article in full, please click here!
MDPI have published an article by Beaudier et Al which explains their investigation of "the effects of targeted irra...